SZMSQA6V1W5T2G【PDF 2/6 页】TVS ARRAY QUAD ESD 6.6V SOT353

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MSQA6V1W5T2G, SZMSQA6V1W5T2G

MAXIMUM RATINGS

Rating

Peak Power Dissipation @ 20 m s

@T A ? 25 ? C (Note 1)

Steady State Power ? 1 Diode (Note 2)

Thermal Resistance

Junction ? to ? Ambient

Above 25 ? C, Derate

Maximum Junction Temperature

Operating Junction and Storage Temperature Range

ESD Discharge

MIL STD 883C ? Method 3015 ? 6

IEC1000 ? 4 ? 2, Air Discharge

IEC1000 ? 4 ? 2, Contact Discharge

Lead Solder Temperature (10 s duration)

Symbol

P pk

P D

R q JA

T Jmax

T J T stg

V PP

T L

Value

150

385

325

3.1

150

? 55 to +150

16

16

9

260

Unit

W

mW

? C/W

mW/ ? C

? C

? C

kV

? C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Non ? repetitive current per Figure 5. Derate per Figure 10.

2. Only 1 diode under power. For all 4 diodes under power, P D will be 25%. Mounted on FR ? 4 board with min pad.

See Application Note AND8308/D for further description of survivability specs.

ELECTRICAL CHARACTERISTICS

(T A = 25 ? C unless otherwise noted)

I

Symbol

I PP

V C

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I PP

I F

I R V F

V RWM

I R

V BR

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V RWM

Breakdown Voltage @ I T

V C V BR V RWM

I T

V

I T

I F

Test Current

Forward Current

V F

P pk

C

Forward Voltage @ I F

Peak Power Dissipation

Capacitance @ V R = 0 and f = 1.0 MHz

I PP

Uni ? Directional TVS

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS

Breakdown Voltage

Device*

V BR @ 1 mA (Vo)

(Note 3)

Min Nom Max

Leakage Current

I RM @ V RWM = 3 V

( m A)

Capacitance

@ 0 V Bias

(pF)

Max

V F @ I F = 200

mA

(V)

V C

Per IEC61000 ? 4 ? 2

(Note 4)

MSQA6V1W5T2G

6.1

6.6

7.2

1.0

90

1.25

Figures 1 and 2

See Below

3. V BR is measured with a pulse test current I T at an ambient temperature of 25 ? C.

4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

*Include SZ-prefix devices where applicable.

http://onsemi.com

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